?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet october unifet tm fdp33n25 / FDPF33N25T 250v n-channel mosfet features ? 33a, 250v, r ds(on) = 0.094 ? @v gs = 10 v ? low gate charge ( typical 36.8 nc) ? low crss ( typical 39 pf) ?fast switching ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. to-220 fdp series g s d to-220f fdpf series g s d d g s absolute maximum ratings symbol parameter fdp33n25 FDPF33N25T unit v dss drain-source voltage 250 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 33 20.4 33* 20.4* a a i dm drain current - pulsed (note 1) 132 132* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 918 mj i ar avalanche current (note 1) 33 a e ar repetitive avalanche energy (note 1) 23.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 235 1.89 37 0.29 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c *drain current limited by maximum junction temperature thermal characteristics symbol parameter fdp33n25 FDPF33N25T unit r jc thermal resistance, junction-to-case 0.53 3.4 c/w r cs thermal resistance, case-to-sink typ. 0.5 -- c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w
2 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdp33n25 fdp33n25 to-220 - - 50 FDPF33N25T FDPF33N25T to-220f - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.25 -- v/ c i dss zero gate voltage drain current v ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 16.5a -- 0.077 0.094 ? g fs forward transconductance v ds = 40v, i d = 16.5a (note 4) -- 26.6 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1640 2135 pf c oss output capacitance -- 330 430 pf c rss reverse transfer capacitance -- 39 59 pf switching characteristics t d(on) turn-on delay time v dd = 125v, i d = 33a r g = 25 ? (note 4, 5) -- 35 80 ns t r turn-on rise time -- 230 470 ns t d(off) turn-off delay time -- 75 160 ns t f turn-off fall time -- 120 250 ns q g total gate charge v ds = 200v, i d = 33a v gs = 10v (note 4, 5) -- 36.8 48 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 17 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 33 a i sm maximum pulsed drain-source diode forward current -- -- 132 a v sd drain-source diode forward voltage v gs = 0v, i s = 33a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 33a di f /dt =100a/ s (note 4) -- 220 -- ns q rr reverse recovery charge -- 1.71 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1.35mh, i as = 33a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 33a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics 24681012 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue 0 20 40 60 80 100 0.00 0.05 0.10 0.15 0.20 0.25 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics f igure 6. gate charge characteristics 0 10203040 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v * note : i d = 33a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 16.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fdp33n25 for FDPF33N25T 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c]
5 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fdp33n25 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.53 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 figure 11-2. transient thermal response curve for FDPF33N25T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 3.4 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 6 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet
peak diode recovery dv/dt test circuit & waveforms 7 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet
8 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet mechanical dimensions to-220 dimensions in millimeters
9 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet dimensions in millimeters package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : ac 2500v
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